Product specifications
SA111, 650 V, 24 A Silicon Carbide Half-Bridge Power IC
Created with Silicon Carbide (SiC) technology and leading-edge package design, the SA111 is expanding the boundaries of thermal efficiency and power density in analog modules. The SA111's Silicon Carbide MOSFETs enable the device to withstand higher thermal stress, managing junction temperatures of up to 175°C. The SA111 SiC power module offers a fully integrated solution allowing for increased device control and protection, featuring an integrated gate driver, under-voltage lockout, and active miller clamping.
With the surface mount package style and exceptionally compact size, designers are afforded the ability to maximize board real estate, allowing for the use of multiple devices in circuit designs with high power requirements. A wide range of target applications include MRI gradient coil-drive, magnetic bearings, motor drive, test equipment, server-fans, Power Factor Correction (PFC), and AC/DC and DC/DC converters.
FEATURES
- Continuous output current - 24A
- Supply voltage - 650V
- 1MHz switching frequency
- Increased thermal efficiency
- case temperature range from -40°C to 125°C
- Internal Power Dissipation: 56W
- Surface mount package with top-side heatsinking
- Integrated gate drive with undervoltage lockout and active Miller clamping
APPLICATIONS
- Magnetic bearings
- Motor drive
- Test equipment
- Sonar
- Server-fans
- Power Factor Correction (PFC)
- AC/DC and DC/DC converters
- APEX Microtechnology product -
